Freescale Semiconductor, Inc.MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc... Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment. • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — –31 dBc • Integrated ESD Protection • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 45 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–08, STYLE 1 TO–270 PLASTIC MRF9045MR1 CASE 1337–03, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9045MBR1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 177 1.18 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 175 °C Symbol Max Unit RθJC 0.85 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22–A113 Rating 3 NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 1 Pout = 45 W PEP. f1 = 945.0 MHz. f1 = 945.0 MHz. Pout = 45 W PEP. ID = 3 Adc) gfs — 4 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz. VGS = 0 Vdc) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc.0 MHz. Pout = 45 W PEP. VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc.1 MHz) IRL — –14 –9 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc.0 MHz. VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc. f2 = 945. f1 = 930. Pout = 45 W PEP. f1 = 945. IDQ = 350 mA.1 MHz and f1 = 960. IDQ = 350 mA.0 MHz.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 28 Vdc. f1 = 930. VGS = 0 Vdc) Crss — 1. IDQ = 350 mA.com .. f1 = 945. f2 = 960.1 MHz and f1 = 960. Pout = 45 W PEP.0 MHz.1 MHz) Gps 17 19 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc.0 MHz. Inc. f2 = 960.22 0.1 MHz and f1 = 960.0 MHz. f2 = 960.0 MHz. ID = 350 mAdc) VGS(Q) 3 3. f2 = 945.1 MHz and f1 = 960. IDQ = 350 mA.8 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc. f1 = 930. ID = 150 µAdc) VGS(th) 2 2.1 MHz) η 38 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc. Pout = 45 W PEP.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 28 Vdc..1 MHz) Gps — 19 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc. f2 = 960. f2 = 945.7 — pF Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc. f2 = 930. 50 ohm system) MRF9045MR1 MRF9045MBR1 2 MOTOROLA RF DEVICE DATA For More Information On This Product.Freescale Semiconductor. f2 = 945. VGS = 0 Vdc) Coss — 38 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz.1 MHz) IRL — –13 — dB OFF CHARACTERISTICS Freescale Semiconductor. f2 = 930. f2 = 930.0 MHz. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc.4 Vdc Forward Transconductance (VDS = 10 Vdc. ID = 1 Adc) VDS(on) — 0. Pout = 45 W PEP.freescale. IDQ = 350 mA. IDQ = 350 mA.0 MHz. IDQ = 350 mA.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc. Inc. ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture. Go to: www. f1 = 930.0 MHz. VGS = 0 Vdc) Ciss — 70 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz. f2 = 930. IDQ = 350 mA. Pout = 45 W PEP.7 5 Vdc Drain–Source On–Voltage (VGS = 10 Vdc. 14″ x 0.14″ x 0. 50 V Electrolytic Capacitor 12. C8.5 nH Inductors 0. B Case 10 pF Chip Capacitors. C9 C6.2 pF Chip Capacitor.57″ x 0.62″ Microstrip 0.Freescale Semiconductor.7 pF Chip Capacitors. L2 Z1 Z2 Z8 DUT Z7 C2 C3 Z9 Z10 Short Ferrite Beads.freescale.36″ x 0. Go to: www. B Case 1.32″ Microstrip 0.33″ x 0. B2 C1.9 pF Chip Capacitor.15″ x 0.32″ Microstrip 0.47″ x 0. C7.20″ x 0. MRF9045MR1 930–960 MHz Broadband Test Circuit Schematic C6 C17 Vbias B1 Ground C2 C3 C5 C4 WB2 C1 L1 WB1 A1 Vsupply B2 C7 CUT OUT AREA Freescale Semiconductor. L2 C9 C5 C1 Z2 + C16 C9 C8 C15 C16 C14 L2 A2 C10 C11 C12 C13 MRF9045MR1 Ground Figure 2. B Case 10 µF.08″ Microstrip 1.32″ x 0.com MRF9045MR1 MRF9045MBR1 3 . C13.2 pF Chip Capacitor.01″ x 0. C15. 35 V Tantalum Surface Mount Capacitors 2.32″ Microstrip 0. B Case 220 µF. C16 C10 C11 C12 C17 L1.08″ Microstrip 0.56″ x 0.18″ x 0. B Case 4.7 pF Chip Capacitor. Inc.. MRF9045MR1 930–960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product.08″ Microstrip 0. C5.16″ x 0. C14 C2.08″ Microstrip Figure 1.32″ Microstrip 0. B Case 2.12″ Microstrip C10 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z12 C13 Z11 C8 C4 C11 + VDD C17 RF OUTPUT Z13 C12 0.29″ x 0.08″ Microstrip 0. B2 B1 VGG + C6 C7 + C15 C14 L1 RF INPUT Z1 Z3 Z4 Z5 Z6 B1. B Case 3.62″ Taper 0. Inc. C8 C3 C4.62″ Microstrip 0.. Surface Mount 47 pF Chip Capacitors. 060″ Microstrip 0.215″ x 0.060″ Microstrip 0. L2 WB1. B Case 0.720″ x 0.5 pF Variable Capacitor.250″ x 0. Johanson Gigatrim 220 µF Electrolytic Chip Capacitor 12. C9..270″ Microstrip 0. 35 V Tantalum Chip Capacitors 7. B Case 0.160″ x 0.com .8–8.5 pF Variable Capacitor.6–4.260″ x 0.490″ x 0. Johanson Gigatrim 10 pF Chip Capacitors. C13. B Case 10 µF. Inc.450″ x 0.290″ x 0.freescale.140″ x 0.Freescale Semiconductor. C16 C11 C12 C17 L1.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board Z12 C13 RF OUTPUT Z13 C12 0. B1 VGG + RF INPUT Z1 B2 C7 C8 L1 Z3 Z4 Z5 Z6 B1 B2 C1.240″ x 0. C15.315″ x 0.500″ x 0. B Case 0.520″ Taper 0.270″ Microstrip 0.4–2.100″ Microstrip 0. C8. C6.060″ Microstrip 0.060″ Microstrip Taconic RF–35–0300.0 pF Variable Capacitor. εr = 3..060″ Microstrip 0.285″ x 0.5 Figure 3. MRF9045MBR1 930–960 MHz Broadband Test Circuit Component Layout MRF9045MR1 MRF9045MBR1 4 MOTOROLA RF DEVICE DATA For More Information On This Product. C14 C2 C3 C4 C5.5 pF Chip Capacitor.270″ x 0. WB2 + VDD C17 Z7 C3 C4 C9 Z8 DUT Z9 Z10 Z11 C11 C10 C6 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors. Inc. C10 C7.520″ Microstrip 0.6 pF Chip Capacitor. Johanson Gigatrim 3.270″ Microstrip 0. MRF9045MBR1 930–960 MHz Broadband Test Circuit Schematic C17 C7 VDD C15 C16 C8 C5 L1 C1 C2 C3 C4 C6 WB2 INPUT B2 B1 CUT OUT AREA VGG WB1 Freescale Semiconductor. Go to: www.270″ Microstrip 0.060″ Microstrip 0. C2 + C16 L2 C5 C1 Z2 + C15 C14 C9 C10 C14 L2 C13 C11 OUTPUT C12 MRF9045MB 900 MHz Rev-02 Figure 4. 1 1 100 10 -15 -20 -25 -30 IDQ = 280 mA -35 350 mA -40 525 mA -45 VDD = 28 Vdc -50 f1 = 945 MHz. POWER GAIN (dB) 20. POWER GAIN (dB) 5th Order -50 -60 7th Order -80 10 100 50 Gps 18 40 16 30 14 20 12 -70 1 60 20 3rd Order -40 100 Figure 7. TYPICAL CHARACTERISTICS Gps 45 18 η 40 16 Two-Tone Measurement 100 kHz Tone Spacing 35 -30 IMD 15 14 -32 -34 IRL -36 13 935 940 945 950 -38 960 955 -12 -14 -16 -18 f.com MRF9045MR1 MRF9045MBR1 5 . Frequency (MHz) Figure 5.5 18 VDD = 28 Vdc f1 = 945 MHz f2 = 945. POWER GAIN (dB) 19 h .5 IMD. INTERMODULATION DISTORTION (dBc) G ps .1 10 -10 22 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945. Intermodulation Distortion versus Output Power Figure 6. Inc. f2 = 945. INTERMODULATION DISTORTION (dBc) Freescale Semiconductor. 12 930 -10 IRL. Go to: www. Power Gain versus Output Power -30 1 Pout.5 17 0. Class AB Broadband Circuit Performance IDQ = 525 mA 20 420 mA 19. OUTPUT POWER (WATTS) AVG.5 350 mA 19 280 mA 18.1 MHz 17. DRAIN EFFICIENCY (%) G ps . INTERMODULATION DISTORTION (dBc) 21 IMD.1 MHz -55 0. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product. OUTPUT POWER (WATTS) PEP Pout.. OUTPUT POWER (WATTS) PEP -20 420 mA 10 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz η 0. Figure 8. Intermodulation Distortion Products versus Output Power η.Freescale Semiconductor. DRAIN EFFICIENCY (%) 50 20 Figure 9. OUTPUT POWER (WATTS) PEP 10 0 100 Pout. Inc.1 1 10 Pout.freescale.. INPUT RETURN LOSS (dB) VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA 17 IMD.1 MHz G ps . DRAIN EFFICIENCY (%) IMD. INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS Pout. Go to: www. OUTPUT POWER (WATTS) PEP Figure 11. Inc. Power Gain. POWER GAIN (dB) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 Pin = 0. DRAIN VOLTAGE (VOLTS) Figure 10.com ...freescale.1 MHz η 16 10 20 0 -20 14 12 32 40 Gps -40 IMD 1 10 -60 100 η. 22 Freescale Semiconductor. Output Voltage versus Supply Voltage (MRF9045MR1) MRF9045MR1 MRF9045MBR1 6 60 18 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945. P out .3 W 22 24 26 IDQ = 350 mA f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing 28 30 VDD. Inc. OUTPUT POWER (WATTS) PEP Pin = 1 W 20 G ps .6 W Pin = 0.Freescale Semiconductor. Efficiency and IMD versus Output Power (MRF9045MBR1) MOTOROLA RF DEVICE DATA For More Information On This Product. 03 + j0. Inc. Zload = Test circuit impedance as measured from drain to ground.. Series Equivalent Input and Output Impedance (MRF9045MR1) MOTOROLA RF DEVICE DATA For More Information On This Product. IDQ = 350 mA. Inc.28 Zsource = Test circuit impedance as measured from gate to ground.com MRF9045MR1 MRF9045MBR1 7 .81 – j0.25 2.Freescale Semiconductor.05 2. Zo = 5 Ω Zload Zsource f = 945 MHz f = 945 MHz f = 930 MHz f = 930 MHz VDD = 28 V.03 + j0.85 – j0. Go to: www. Freescale Semiconductor.freescale.09 945 0. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Pout = 45 W (PEP) f MHz Zload Ω Zsource Ω 930 0.. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Zload = Test circuit impedance as measured from drain to ground.freescale.55 – j0.05 960 0.60 – j0.05 945 0.com . IDQ = 350 mA.. Inc. Go to: www.6 2. Series Equivalent Input and Output Impedance (MRF9045MBR1) MRF9045MR1 MRF9045MBR1 8 MOTOROLA RF DEVICE DATA For More Information On This Product. Inc.02 Zsource = Test circuit impedance as measured from gate to ground.72 – j0.75 – j0.. Pout = 45 W (PEP) Zload Ω f MHz Zsource Ω 930 0. Freescale Semiconductor. Zo = 5 Ω Zload f = 960 MHz f = 960 MHz f = 930 MHz Zsource f = 930 MHz VDD = 28 V.65 – j0.5 2.6 2.Freescale Semiconductor.70 – j0. Go to: www. NOTES MOTOROLA RF DEVICE DATA For More Information On This Product..freescale. Inc.. Freescale Semiconductor.com MRF9045MR1 MRF9045MBR1 9 .Freescale Semiconductor. Inc. 57 10.004 DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa BOTTOM VIEW F c1 H NOTES: 1. 2.416 . GATE 3.freescale.074 .290 .066 .08 0.150 .025 BSC .87 5.382 .082 . DRAIN 2. Go to: www.IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE.AND -B.238 . 7.043 . DATUMS -A. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 3. PIN ONE ID EXPOSED HEATSINK AREA PIN 1 DATUM PLANE INCHES MIN MAX .003 PER SIDE.02 1.066 .040 .011 .98 2.016 .039 . PACKAGE DIMENSIONS E1 B 2X D3 2X E4 aaa D aaa M D A M 2X D A D1 b1 E A E5 E3 PIN 2 D2 PIN 3 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ Freescale Semiconductor. Inc.57 1.64 BSC 4. ZONE J A A1 MILLIMETERS MIN MAX 1.424 .058 .5M-1994. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE MOLD PROTRUSION.07 11.199 .Freescale Semiconductor.007 ..378 .99 1.18 0.70 7.436 .TO BE DETERMINED AT DATUM PLANE -H-. ALLOWABLE DAMBAR PROTRUSION SHALL BE . INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.28 0.09 1.com .042 .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. DIMENSIONS “D" AND “E2" DO INCLUDE MOLD MISMATCH AND ARE DETERĆ MINED AT DATUM PLANE -D-.193 .81 4.37 8.231 .320 .078 . DIMENSIONS “D" AND “E2" DO NOT INCLUDE MOLD PROTRUSION. 8. ALLOWABLE PROTRUSION IS .242 .41 0.28 6.47 1.235 .07 10.06 0. 6.006 PER SIDE.90 5.. DIMENSIONS “D1" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETERĆ MINED AT DATUM PLANE -H-.88 3. 5. ALLOWABLE PROTRUSION IS .180 .68 5.13 0.04 6.77 9. Inc. DATUM PLANE -H. CONTROLLING DIMENSION: INCH.444 .60 9. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION.10 STYLE 1: PIN 1.024 .61 11.97 0. 4. SOURCE 2X A2 NOTE 7 E2 E5 D CASE 1265–08 ISSUE G TO–270 PLASTIC MRF9045MR1 MRF9045MR1 MRF9045MBR1 10 MOTOROLA RF DEVICE DATA For More Information On This Product.68 1.15 1. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.068 .23 6.60 1.28 1. SOURCE CASE 1337–03 ISSUE B TO–272 DUAL LEAD PLASTIC MRF9045MBR1 MOTOROLA RF DEVICE DATA NOTES: 1. A E1 B 2X r1 aaa M C A B DRAIN ID D1 2X DRAIN LEAD b1 aaa Freescale Semiconductor.241 .199 . ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ GATE LEAD M D C A 2 E PIN 3 1 NOTE 8 E2 VIEW Y–Y c1 H F ZONE "J" DATUM PLANE A A1 A2 7 E2 Y Y C SEATING PLANE STYLE 1: PIN 1. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION.252 . Go to: www.AND -B.67 20.30 6.64 BSC 4..104 ..54 2.932 .57 BSC 11.freescale.007 .004 MILLIMETERS MIN MAX 2.12 11. 7. Inc.10 MRF9045MR1 MRF9045MBR1 11 .64 0.193 . Inc.245 .99 1.TO BE DETERMINED AT DATUM PLANE -H-.57 23.043 . 2.100 .040 .006 PER SIDE.928 .05 .5M. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.042 .025 BSC . 3.248 . 1994.73 .90 5.com INCHES MIN MAX . CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG.810 BSC . DRAIN 2.09 1.442 . GATE 3.07 23.Freescale Semiconductor. DATUMS -A.18 . DATUM PLANE -H.22 0. 4. 5. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-.IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE.011 . 6.039 .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION.438 . DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa For More Information On This Product. ALLOWABLE PROTRUSION IS .40 6.02 1. CONTROLLING DIMENSION: INCH. ALLOWABLE DAMBAR PROTRUSION SHALL BE . DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION.063 .12 6. 8. freescale. or authorized for use as components in systems intended for surgical implant into the body. any claim of personal injury or death associated with such unintended or unauthorized use. or other applications intended to support or sustain life. Freescale Semiconductor. even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Colorado 80217 1–800–521–6274 or 480–768–2130 JAPAN: Motorola Japan Ltd.com MRF9045MR1/D . Hong Kong 852–26668334 HOME PAGE: http://motorola. Buyer shall indemnify and hold Motorola and its officers. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application. E Motorola Inc..T. Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H. is an Equal Opportunity/Affirmative Action Employer. Inc. and expenses.. directly or indirectly. 3–20–1. employees. Silicon Harbour Centre. 2 Dai King Street. nor does Motorola assume any liability arising out of the application or use of any product or circuit. Motorola. or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Box 5405. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Inc.O. All operating parameters. and distributors harmless against all claims. SPS. Motorola makes no warranty. Tai Po. Inc. Minato–ku.com/semiconductors MRF9045MR1 MRF9045MBR1 12 MOTOROLA RF DEVICE DATA For More Information On This Product. and reasonable attorney fees arising out of. ◊ Go to: www. must be validated for each customer application by customer’s technical experts. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document... Information in this document is provided solely to enable system and software implementers to use Motorola products. Tokyo 106–8573. intended. Motorola does not convey any license under its patent rights nor the rights of others.Freescale Semiconductor. All other product or service names are the property of their respective owners. subsidiaries. N. Ltd. Motorola products are not designed. including “Typicals”. Motorola reserves the right to make changes without further notice to any products herein. Tai Po Industrial Estate. and specifically disclaims any and all liability. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P. Denver. affiliates. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. including without limitation consequential or incidental damages. Minami–Azabu.K. representation or guarantee regarding the suitability of its products for any particular purpose. Technical Information Center. damages. costs..