APM9435

APM9435P-Channel Enhancement Mode MOSFET Features • • • • -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G SO − 8 S S S Ordering and Marking Information APM 9435 H a n d lin g C o d e Tem p. R ange P ackage C ode D D D D P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 9435 APM 9435 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating -30 ±25 TA = 25°C -4.6 -20 Unit V A Maximum Drain Current – Continuous Maximum Drain Current – Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.4 - Mar., 2003 1 www.anpec.com.tw 5 1.anpec. ID =-4.5 4. -30 -1 -1 -3 ±100 52 80 -0.Mar.6 60 95 -1. VGS=0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V DD=-25V..tw .6A V GS=-4. R G=6Ω. Max. Rev.APM9435 Absolute Maximum Ratings Symbol PD T J) T STG R θJA Parameter Maximum Power Dissipation T A = 25°C T A = 100°C Maximum Operating and Storage Junction Temperature Thermal Resistance . V GS=0V. ID=-2A .Junction to Ambient (TA = 25°C unless otherwise noted) Rating 2.com.0MHZ V DS=-15V.3 mΩ V V uA V nA Parameter Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b b V GS=0V. VGS =-10V. ID=-4.0 -55 to 150 50 Unit W °C °C/W Electrical Characteristics Symbol Static BV DSS IDSS VGS(th) IGSS R DS(ON) VSD Dynamica Qg Q gs Q gd td(ON) tr td(OFF) tf C iss C oss C rss Notes a b (TA = 25°C unless otherwise noted) APM9435 Unit Min. R L=12.6A 22. V DS=-25V Frequency = 1.4 . VDS =0V V GS=-10V. VGS =0V V DS=VGS. ID =-250µA V DS=24V.5Ω. VGEN=-10V. ID=250µA V GS=±25V.5V.5 2 8 8 35 11 845 120 80 29 nC 17 18 60 28 ns pF : Guaranteed by design. Typ a. duty cycle ≤ 2% Copyright  ANPEC Electronics Corp. ID=-2A ISD=-3A. not subject to production testing : Pulse test . pulse width ≤300µs. A. 2003 2 www. 0 12.00 0.8.12 0.Junction Temperature (°C) -ID .APM9435 Typical Characteristics Output Characteristics 20 -VGS=5.08 0.6. 2003 3 www.4 .50 0.anpec.Drain Current (A) Copyright  ANPEC Electronics Corp.04 0.16 -IDS=250µA On-Resistance vs.5 10. Drain Current -VGS(th)-Threshold Voltage (V) (Normalized) RDS(on)-On-Resistance (Ω) 1.25 1.Drain-to-Source Voltage (V) -VGS .0 2.25 0.com.02 -25 0 25 50 75 100 125 150 0..14 0.5V Tj . Junction Temperature 1.0 17.9.50 0.Mar.00 0.tw .5 5.75 0.0 7.7.00 -50 0.Gate-to-Source Voltage (V) Threshold Voltage vs.5 15.10V -V GS =4V Transfer Characteristics 20 -ID-Drain Current (A) 10 -V GS=3V -ID-Drain Current (A) 15 15 10 TJ=25°C 5 5 TJ=125°C TJ=-55°C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -VDS .0 -V GS=10V -VGS=4.10 0. A.06 0. Rev.5 20. Junction Temperature 2.Mar.25 0..00 0.com. 2003 4 www.00 1.6A 8 1000 Ciss Capacitance (pF) 800 600 400 200 0 Coss Crss 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 30 QG .75 1.Drain-to-Source Voltage (V) Copyright  ANPEC Electronics Corp.30 -ID=4.Junction Temperature (°C) Gate Charge 10 Capacitance 1200 Frequency=1MHz -VGS-Gate-Source Voltage (V) -V DS =15V -IDS=4.4 . A.Gate Charge (nC) -VDS .10 0.25 1.Gate-to-Source Voltage (V) TJ .15 0.APM9435 Typical Characteristics On-Resistance vs.anpec. Rev.50 1.25 0.20 0.00 -VGS=10V -ID=4.50 0.tw .75 0.6A RDS(on)-On-Resistance (Ω) RDS(on)-On-Resistance (Ω) (Normalized) 1 2 3 4 5 6 7 8 9 10 0. Gate-to-Source Voltage 0.6A On-Resistance vs.05 0.00 -50 -25 0 25 50 75 100 125 150 -VGS . 02 SINGLE PULSE 0.1 1 10 30 -VSD-Source-to-Drain Voltage (V ) Time (sec) Normalized Thermal Transient Impedence.8 1.1 D= 0.Per Unit Base=RthJA=50°C/W 3.01 1E-4 1E-3 0. D=t1/t2 2.8 0 0.05 1.2 D= 0. A. Rev. 2003 5 www.5 D= 0.2 0.6 1.com.01 0.Duty Cycle.4 1.anpec.0 0.4 0.0 1.6 0.1 0..Surface Mounted D= 0.4 .Mar.1 0.tw .01 0.2 1.1 1 10 30 Square Wave Pulse Duration (sec) Copyright  ANPEC Electronics Corp.TJM-TA=PDMZthJA 4. Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.APM9435 Typical Characteristics Source-Drain Diode Forward Voltage 20 Single Pulse Power 80 70 60 10 -IS-Source Current (Α) Power (W) 50 40 30 20 10 1 TJ=150°C TJ=25°C 0. 004max.4 . 197 0.015X45 Inche s Max . 050 0. 2003 6 www.com. Rev. 40 0. 1.tw . 80 3. 189 0. 004 0. 0. 75 0. 244 0. Dim A A1 D E H L e1 e2 φ 1 Mi ll im et er s Min . 27B S C 8° Max . 20 1. 80 5. A. 10 4. 00 6.Mar. 150 0. 053 0. 020 0. 069 0. 51 Min. 013 0. 33 1. 1. 80 0. 010 0. 27 0..APM9435 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.anpec. 35 0. 016 0. 25 5. 0. 157 0. 228 0. 00 4. 50B S C 8° Copyright  ANPEC Electronics Corp. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max.Mar.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg.APM9435 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91. thickness ≥ 2. A. 2003 7 .5mm and pkg.com. thickness < 2. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max.4 . Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max.5mm and pkg. thickness < 2. Rev. Time 25°C to peak temperature VPR 10 °C /second max.. 6 minutes max. volume ≥ 350 mm³ pkg. Package Reflow Conditions pkg.tw Copyright  ANPEC Electronics Corp. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec. ANSI/J-STD-002 Category 3. 3 Bo 5.25 4.013 Copyright  ANPEC Electronics Corp. 1 P 8± 0.4 ± 0.Mar.4 .7 JESD-22-B.anpec. Rev.1 2.1 6. A102 MIL-STD 883D-1011.5 SEC 1000 Hrs Bias @ 125°C 168 Hrs.2± 0.0 ± 0.APM9435 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.1 Ko E 1.tw .5 D C 12.55 +0.75+ 0.9 Description 245°C.2 P1 T2 2 ± 0.1 0.0 ± 0.75±0. 121°C -65°C ~ 150°C.15 D1 J 2 ± 0..3±0. A.4 ± 0.2 Ao W 12± 0.8 F 5.com.1 2.1 t SOP.5 Po T1 12.1± 0.5± 1 1. 2003 8 www. 100% RH. 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 ± 1 B 62 +1.55+ 0.1 1. No. 2003 9 www. Taiwan.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F.tw .com.anpec. 2 Li-Hsin Road.. 137.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. No.Mar. Hsin-Chu. SBIP. Taiwan. C. O.O. Head Office : 5F. R. Hsin Tien City. Lane 235.. Rev.8 Carrier Width 12 Cover Tape Width 9. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright  ANPEC Electronics Corp.4 . Taipei Hsien. A.APM9435 Cover Tape Dimensions Application SOP. R. Pac Chiao Rd.